Performance assessment of InGaAs–SOI–FinFET for enhancing switching capability using high-k dielectric
In this work, a high-k In0.53Ga0.47As silicon-on-insulator FinFET (InGaAs–SOI–FinFET) is presented for high-switching and ultra-low power applications at 7 nm gate length. Indium Gallium Arsenide (InGaAs) is a compound semiconductor that has gained attention in the field of semiconductor devices, in...
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| Hauptverfasser: | , |
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| Format: | Artigo |
| Sprache: | Inglês |
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Elsevier
2024-08-01
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| Schriftenreihe: | Memories - Materials, Devices, Circuits and Systems |
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| Online-Zugang: | http://www.sciencedirect.com/science/article/pii/S2773064624000203 |
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