Performance assessment of InGaAs–SOI–FinFET for enhancing switching capability using high-k dielectric
In this work, a high-k In0.53Ga0.47As silicon-on-insulator FinFET (InGaAs–SOI–FinFET) is presented for high-switching and ultra-low power applications at 7 nm gate length. Indium Gallium Arsenide (InGaAs) is a compound semiconductor that has gained attention in the field of semiconductor devices, in...
Wedi'i Gadw mewn:
| Prif Awduron: | , |
|---|---|
| Fformat: | Artigo |
| Iaith: | Inglês |
| Cyhoeddwyd: |
Elsevier
2024-08-01
|
| Cyfres: | Memories - Materials, Devices, Circuits and Systems |
| Pynciau: | |
| Mynediad Ar-lein: | http://www.sciencedirect.com/science/article/pii/S2773064624000203 |
| Tagiau: |
Dim Tagiau, Byddwch y cyntaf i dagio'r cofnod hwn!
|