Utilizing (Al, Ga)2O3/Ga2O3 superlattices to measure cation vacancy diffusion and vacancy-concentration-dependent diffusion of Al, Sn, and Fe in β-Ga2O3
Diffusion of native defects such as vacancies and their interactions with impurities are fundamental to semiconductor crystal growth, device processing, and design. However, the transient equilibration of native defects is difficult to directly measure. We used (AlxGa1−x)2O3/Ga2O3 superlattices (SLs...
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| Principais autores: | , , , , , , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
AIP Publishing LLC
2024-08-01
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| Series: | APL Materials |
| Acceso en liña: | http://dx.doi.org/10.1063/5.0206398 |
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