Utilizing (Al, Ga)2O3/Ga2O3 superlattices to measure cation vacancy diffusion and vacancy-concentration-dependent diffusion of Al, Sn, and Fe in β-Ga2O3

Diffusion of native defects such as vacancies and their interactions with impurities are fundamental to semiconductor crystal growth, device processing, and design. However, the transient equilibration of native defects is difficult to directly measure. We used (AlxGa1−x)2O3/Ga2O3 superlattices (SLs...

Повний опис

Бібліографічні деталі

Автори:	Nathan D. Rock, Haobo Yang, Brian Eisner, Aviva Levin, Arkka Bhattacharyya, Sriram Krishnamoorthy, Praneeth Ranga, Michael A. Walker, Larry Wang, Ming Kit Cheng, Wei Zhao, Michael A. Scarpulla
Формат:	Artigo
Мова:	Inglês
Опубліковано:	AIP Publishing LLC 2024-08-01
Серія:	APL Materials
Онлайн доступ:	http://dx.doi.org/10.1063/5.0206398
Теги:	Додати тег Немає тегів, Будьте першим, хто поставить тег для цього запису!