Utilizing (Al, Ga)2O3/Ga2O3 superlattices to measure cation vacancy diffusion and vacancy-concentration-dependent diffusion of Al, Sn, and Fe in β-Ga2O3

Diffusion of native defects such as vacancies and their interactions with impurities are fundamental to semiconductor crystal growth, device processing, and design. However, the transient equilibration of native defects is difficult to directly measure. We used (AlxGa1−x)2O3/Ga2O3 superlattices (SLs...

ver descrição completa

Detalhes bibliográficos

Principais autores:	Nathan D. Rock, Haobo Yang, Brian Eisner, Aviva Levin, Arkka Bhattacharyya, Sriram Krishnamoorthy, Praneeth Ranga, Michael A. Walker, Larry Wang, Ming Kit Cheng, Wei Zhao, Michael A. Scarpulla
Formato:	Artigo
Idioma:	Inglês
Publicado em:	AIP Publishing LLC 2024-08-01
coleção:	APL Materials
Acesso em linha:	http://dx.doi.org/10.1063/5.0206398
Tags:	Adicionar Tag Sem tags, seja o primeiro a adicionar uma tag!