AlGaN/GaN Metal Oxide Semiconductor High-Electron Mobility Transistors with Annealed TiO₂ as Passivation and Dielectric Layers

This paper reports on improved AlGaN/GaN metal oxide semiconductor high-electron mobility transistors (MOS-HEMTs). TiO₂ is used to form the dielectric and passivation layers. The TiO₂ film is characterized using X-ray photoemission spectroscopy (XPS), Raman spectroscopy, and tr...

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Váldodahkkit:	Yu-Shyan Lin, Chi-Che Lu
Materiálatiipa:	Artigo
Giella:	Inglês
Almmustuhtton:	MDPI AG 2023-05-01
Ráidu:	Micromachines
Fáttát:	MOS-HEMT AlGaN GaN silicon substrate TiO<sub>2</sub> passivation
Liŋkkat:	https://www.mdpi.com/2072-666X/14/6/1183
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