A Simulation Optimization Factor of Si(111)-Based AlGaN/GaN Epitaxy for High Frequency and Low-Voltage-Control High Electron Mobility Transistor Application
The effects of barrier layer thickness, Al component of barrier layer, and passivation layer thickness of high-resistance Si (111)-based AlGaN/GaN heterojunction epitaxy on the knee-point voltage (<i>V<sub>knee</sub></i>), saturation current density (<i>I<sub>d-sat</sub></i>), and cut-off frequency...
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| Hlavní autoři: | , , , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
MDPI AG
2023-01-01
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| Edice: | Micromachines |
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| On-line přístup: | https://www.mdpi.com/2072-666X/14/1/168 |
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