Monolithic integration of circuits in e-mode GaN HEMT technology

This work presents a power transistor with monolithically integrated gate driver and auxiliary circuit in the same GaN-on-Si die. It presents the design, the characterization and validation tests in a PCB similarly to a final application for this device. The target application is for USB-C chargers...

Deskribapen osoa

Gorde:
Xehetasun bibliografikoak
Egile Nagusiak: Plinio Bau, Thanh Hai Phung, Stephane Driussi, Thomas Beauchene
Formatua: Artigo
Hizkuntza:Inglês
Argitaratua: Elsevier 2025-06-01
Saila:Power Electronic Devices and Components
Gaiak:
Gallium nitride
HEMTs
Gate drivers
Driver circuits
Monolithic integrated circuits
Power integrated circuits
Sarrera elektronikoa:http://www.sciencedirect.com/science/article/pii/S2772370425000148
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