Simultaneous Submicron Temperature Mapping of Substrate and Channel in P-GaN/AlGaN/GaN HEMTs Using Raman Thermometry

In this study, we introduce a high-resolution, high-speed thermal imaging technique using Raman spectroscopy to simultaneously measure the temperature of a substrate and a channel. By modifying the Raman spectrometer, we achieved a measurement speed faster than commercial spectrometers. This system...

Celý popis

Podrobná bibliografie

Hlavní autoři:	Jaesun Kim, Seungyoung Lim, Gyeong Eun Choi, Jung-ki Park, Ho-Young Cha, Cheol-Ho Kwak, Jinhong Lim, Youngboo Moon, Jung-Hoon Song
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	MDPI AG 2025-07-01
Edice:	Applied Sciences
Témata:	thermography gallium nitride Raman spectroscopy power device hotspots HEMT
On-line přístup:	https://www.mdpi.com/2076-3417/15/14/7860
Tagy:	Přidat tag Žádné tagy, Buďte první, kdo vytvoří štítek k tomuto záznamu!