Simultaneous Submicron Temperature Mapping of Substrate and Channel in P-GaN/AlGaN/GaN HEMTs Using Raman Thermometry

In this study, we introduce a high-resolution, high-speed thermal imaging technique using Raman spectroscopy to simultaneously measure the temperature of a substrate and a channel. By modifying the Raman spectrometer, we achieved a measurement speed faster than commercial spectrometers. This system...

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Detalles Bibliográficos

Principais autores:	Jaesun Kim, Seungyoung Lim, Gyeong Eun Choi, Jung-ki Park, Ho-Young Cha, Cheol-Ho Kwak, Jinhong Lim, Youngboo Moon, Jung-Hoon Song
Formato:	Artigo
Idioma:	Inglês
Publicado:	MDPI AG 2025-07-01
Series:	Applied Sciences
Assuntos:	thermography gallium nitride Raman spectroscopy power device hotspots HEMT
Acceso en liña:	https://www.mdpi.com/2076-3417/15/14/7860
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