Complete crack elimination in strained SiGe/Ge(111) heterostructures by pre-patterning of Si(111) substrates

We propose a novel method to completely eliminate cracks, which are unavoidably generated in strained SiGe(111) layers grown on Ge(111). We perform mesa-patterning of the Si(111) substrate first, and subsequently grow the strained SiGe/Ge(111) on the pre-patterned Si. It is resultantly demonstrated...

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Autors principals:	M. Nagao, R. Mizoguchi, Y. Shibahara, K. Shikatake, M. Yamada, K. Hamaya, K. Sawano
Format:	Artigo
Idioma:	Inglês
Publicat:	IOP Publishing 2025-01-01
Col·lecció:	Applied Physics Express
Matèries:	Germanium Silicon Germanium crystal growth crack spintronic devices
Accés en línia:	https://doi.org/10.35848/1882-0786/add83c
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