The Research of Drain Induced Barrier Lower Effect for SOI Strained Silicon Schottky Source/Drain MOSFET with High-k Gate Dielectric
The SOI strained silicon schottky source/drain MOSFET with high-k gate dielectric is a potential device realizing small size MOSFET, which combines the advantages of strained silicon engineering, high-k gate dielectric, SOI structure and schottky source/drain. A model for the structure is proposed b...
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| 主要な著者: | , , |
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| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
Editorial Department of Journal of Sichuan University (Natural Science Edition)
2017-01-01
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| シリーズ: | 四川大学学报. 自然科学版 |
| 主題: | |
| オンライン･アクセス: | http://science.scu.edu.cn/thesisDetails?columnId=45827707&Fpath=home&index=0 |
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