Performance Analysis of a Dual‐Drain Dual‐Gate Schottky Tunnel Field Effect Transistor Biosensor for Non‐Ideal Hybridization
ABSTRACT In this study, we analyzed the sensing characteristics of a MoS₂‐based dual‐drain, dual‐gate Schottky tunnel field effect transistor (DD‐DG‐STFET) based on the hybridization process to achieve groundbreaking sensitivity. The proposed device gives prominence to a nanogap under the gate elect...
Tallennettuna:
| Päätekijät: | , |
|---|---|
| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
Wiley-VCH
2025-11-01
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| Sarja: | Nano Select |
| Aiheet: | |
| Linkit: | https://doi.org/10.1002/nano.70013 |
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