Hole Injection Effect and Dynamic Characteristic Analysis of Normally Off p-GaN HEMT with AlGaN Cap Layer on Low-Resistivity SiC Substrate

A p-GaN HEMT with an AlGaN cap layer was grown on a low resistance SiC substrate. The AlGaN cap layer had a wide band gap which can effectively suppress hole injection and improve gate reliability. In addition, we selected a 0° angle and low resistance SiC substrate which not only substantially redu...

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Principais autores:	Hsiang-Chun Wang, Chia-Hao Liu, Chong-Rong Huang, Hsien-Chin Chiu, Hsuan-Ling Kao, Xinke Liu
Format:	Artigo
Jezik:	Inglês
Izdano:	MDPI AG 2022-05-01
Serija:	Micromachines
Teme:	p-GaN E-mode HEMT normally-off dynamic Ron hole injection V<sub>TH</sub> shifting
Online dostop:	https://www.mdpi.com/2072-666X/13/5/807
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