Effect of X-ray irradiation on threshold voltage of AlGaN/GaN HEMTs with p-GaN and MIS Gates

Commercially available AlGaN/GaN high-electron-mobility transistors (HEMTs) are beginning to enter the public scene from a range of suppliers. Based on previous studies, commercial GaN-based electronics are expected to be tolerant to different types of irradiation in space. To test this assumption,...

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Hlavní autoři:	Yongle Qi, Denggui Wang, Jianjun Zhou, Kai Zhang, Yuechan Kong, Suzhen Wu, Tangsheng Chen
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	AIP Publishing LLC 2020-12-01
Edice:	Nanotechnology and Precision Engineering
Témata:	p-GaN gate GaN HEMTs X-ray irradiation Threshold voltage
On-line přístup:	http://www.sciencedirect.com/science/article/pii/S2589554020300362
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