Optical characterization of Te-doped GaxIn1-xAsySb1-y epitaxial layers grown by liquid phase epitaxy

A set of GaxIn1-xAsySb1-y quaternary layers were grown on (100) GaSb substrates using the liquid phase epitaxy technique (LPE). These layers were doped with tellurium and were characterized by Raman, Photoluminescence (PL) spectroscopy, and Secondary Ion Mass Spectroscopy (SIMS). Several optical mod...

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Publicat a:	Superficies y vacío
Autors principals:	Y. E. Bravo-García, M. Zapata-Torres, P. Rodríguez-Fragoso, J.G. Mendoza-Alvarez, J. L. Herrera-Pérez, J. A. Cardona- Bedoya, M. L. Gómez-Herrera
Format:	Artigo
Idioma:	Inglês
Publicat:	Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. 2012
Matèries:	Física, Astronomía y Matemáticas
Accés en línia:	https://www.redalyc.org/articulo.oa?id=94224555006
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