Research Review of InAs/GaSb Superlattice Mesa Etching Process
This paper reviews the research on InAs/GaSb superlattice mesa etching technology. The physicochemi-cal mechanism and parameter control of wet and dry etching are analyzed to elucidate the influence of process conditions on mesa morphology, so as to suppress the surface leakage current of long wave...
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| Autor principal: | |
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| Format: | Artigo |
| Idioma: | Chinês |
| Publicat: |
Editorial Office of Aero Weaponry
2024-10-01
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| Col·lecció: | Hangkong bingqi |
| Matèries: | |
| Accés en línia: | https://www.aeroweaponry.avic.com/fileup/1673-5048/PDF/2023-0207.pdf |
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