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Research Review of InAs/GaSb Superlattice Mesa Etching Process

This paper reviews the research on InAs/GaSb superlattice mesa etching technology. The physicochemi-cal mechanism and parameter control of wet and dry etching are analyzed to elucidate the influence of process conditions on mesa morphology, so as to suppress the surface leakage current of long wave...

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Autore principale: Zhang Xiangyu, Jiang Dongwei, He Wen, Wang Jinzhong
Natura: Artigo
Lingua:Chinês
Pubblicazione: Editorial Office of Aero Weaponry 2024-10-01
Serie:Hangkong bingqi
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Accesso online:https://www.aeroweaponry.avic.com/fileup/1673-5048/PDF/2023-0207.pdf
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