Optical characterization of Te-doped GaxIn1-xAsySb1-y epitaxial layers grown by liquid phase epitaxy
A set of GaxIn1-xAsySb1-y quaternary layers were grown on (100) GaSb substrates using the liquid phase epitaxy technique (LPE). These layers were doped with tellurium and were characterized by Raman, Photoluminescence (PL) spectroscopy, and Secondary Ion Mass Spectroscopy (SIMS). Several optical mod...
Kaydedildi:
| Yayımlandı: | Superficies y vacío |
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| Asıl Yazarlar: | , , , , , , |
| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2012
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| Konular: | |
| Online Erişim: | https://www.redalyc.org/articulo.oa?id=94224555006 |
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