Effects of in-situ annealing processes of GaAs(100) surfaces on the molecular beam epitaxial growth of InAs quantum dots
We studied the growth of self assembled InAs quantum dots (QDs) on GaAs (100) surfaces subjected to an in situ annealing treatment. The treatment consists in exposing the GaAs buffer layer surface at a high temperature for a few seconds with the As4- shutter closed. The exposure of GaAs at high temp...
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| Pubblicato in: | Superficies y vacío |
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| Autori principali: | , , , , , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2005
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| Soggetti: | |
| Accesso online: | https://www.redalyc.org/articulo.oa?id=94218201 |
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