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Caracterización térmica de capas semiconductoras de AlxGa1-xAs en región de 0.5< x< 0.87

The thermal characterization of Al0.7Ga0.3As alloys grown by liquid phase epitaxy on GaAs substrates, is performed by means of the open photoacustic cell technique. We determine the thermal diffusivity and thermal conductivity by using a model based on the analogy between electrical and thermal resi...

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Bibliographic Details
Published in:Superficies y vacío
Main Authors: J. L. Pichardo, J. G. Mendoza-Alvarez, A. Cruz-Orea, J. J. Alvarado-Gil, G. Torres-Delgado
Format: Artigo
Language:Espanhol
Published: Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. 1999
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Online Access:https://www.redalyc.org/articulo.oa?id=94211324026
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