GaN growth on (111) Si with very thin amorphous SiN layer by ECR plasma-assisted MBE
We have investigated the structure and quality of GaN films grown on a 2-3 nm thick amorphous SiN layer formed on (111) Si by electron cyclotron resonance plasma-assisted molecular beam epitaxy under various growth conditions by using both conventional and high-resolution transmission electron micro...
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| Veröffentlicht in: | Superficies y vacío |
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| Hauptverfasser: | , , |
| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2001
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| Schlagworte: | |
| Online-Zugang: | https://www.redalyc.org/articulo.oa?id=94201321 |
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