Growth of thick epitaxial InAs layers by CSVT

InAs epitaxial layers have been grow by Close Spaced Vapor Transport using water vapor as transporting gas. Growth rate is controlled by source, and substrate temperatures and the transporting gas pressure. The growth seems to be proportional to the transporting gas pressure. Growth rates as high as...

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發表在:	Superficies y vacío
Principais autores:	R. Huerta, J. Mimila Arroyo, A. Lusson, R. Hinojosa, A. Tromson, F. Jomard
格式:	Artigo
語言:	Inglês
出版:	Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. 2001
主題:	Física, Astronomía y Matemáticas
在線閱讀:	https://www.redalyc.org/articulo.oa?id=94201313
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