Growth of thick epitaxial InAs layers by CSVT
InAs epitaxial layers have been grow by Close Spaced Vapor Transport using water vapor as transporting gas. Growth rate is controlled by source, and substrate temperatures and the transporting gas pressure. The growth seems to be proportional to the transporting gas pressure. Growth rates as high as...
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| Vydáno v: | Superficies y vacío |
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| Hlavní autoři: | , , , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2001
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| Témata: | |
| On-line přístup: | https://www.redalyc.org/articulo.oa?id=94201313 |
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