Photoluminescence study of AlGaAs/GaAs quantum wells grown by molecular beam epitaxy with in-situ / ex–situ growth interruptions

The specific properties of quantum wells (QWs) grown by molecular beam epitaxy (MBE) are directly affected by severalaspects, such as non-intentional incorporated impurities, alloy disorder, interface roughness, etc. These aspects stronglydepend on the particular process used during the MBE growth....

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Enregistré dans:
Détails bibliographiques
Publié dans:Superficies y vacío
Auteurs principaux: M. López López, P. Acosta Díaz, O. Cano Aguilar, F.L. Castillo Alvarado, M. Meléndez Lira
Format: Artigo
Langue:Inglês
Publié: Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. 2001
Sujets:
Física, Astronomía y Matemáticas
in
Quantum wells
situ processing
growth interruption
molecular beam epitaxy
Accès en ligne:https://www.redalyc.org/articulo.oa?id=94201209
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