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Photoluminescence study of AlGaAs/GaAs quantum wells grown by molecular beam epitaxy with in-situ / exsitu growth interruptions
The specific properties of quantum wells (QWs) grown by molecular beam epitaxy (MBE) are directly affected by severalaspects, such as non-intentional incorporated impurities, alloy disorder, interface roughness, etc. These aspects stronglydepend on the particular process used during the MBE growth....
保存先:
| 出版年: | Superficies y vacío |
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| 主要な著者: | , , , , |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2001
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| 主題: | |
| オンライン･アクセス: | https://www.redalyc.org/articulo.oa?id=94201209 |
| タグ: |
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