XPS analysis of oxidation states of Te in CdTe oxide films grown by rf sputtering with an Ar -NH3 plasma
Using rf-sputtering, CdTe oxide films were grown on glass substrates in a controlled plasma of Ar-NH3. The elementalconcentration and oxidation state of Te were determined by x-ray photoelectron spectroscopy. When the NH3 partialpressure increases from 3´10-6 to 1´10-4 Torr, the relative atomic conc...
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| Publicado no: | Superficies y vacío |
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| Principais autores: | , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2001
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| Assuntos: | |
| Acesso em linha: | https://www.redalyc.org/articulo.oa?id=94201203 |
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