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Application of optical scatterometry to microstructure changes of Si1 xGex/Si heterostructures grown by gas source molecular beam epitaxy
The microstructure changes of Si1 xGex/Si heterostructures grown by gas source molecular epitaxy (GSMBE) were investigated by the scatterometer with angle-resolved scattering. Experimental results show that the microstructure changes with different strain distributions in pseudomorphic layers affect...
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| Vydáno v: | Superficies y vacío |
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| Hlavní autoři: | , , , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
1999
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| Témata: | |
| On-line přístup: | https://www.redalyc.org/articulo.oa?id=94200967 |
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