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Modeling, Design, and Fabrication of Self-Doping Si1−xGex/Si Multiquantum Well Material for Infrared Sensing
The paper presents the study of band distributions and thermoelectric properties of self-doping Si1−xGex/Si multiquantum well material for infrared detection. The simulations of different structures (including boron doping, germanium concentrations, and SiGe layer thickness) have been conducted. The...
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| Main Authors: | , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Hindawi Limited
2016-01-01
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| Colecção: | Journal of Sensors |
| Acesso em linha: | http://dx.doi.org/10.1155/2016/6584650 |
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