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Modeling, Design, and Fabrication of Self-Doping Si1−xGex/Si Multiquantum Well Material for Infrared Sensing

The paper presents the study of band distributions and thermoelectric properties of self-doping Si1−xGex/Si multiquantum well material for infrared detection. The simulations of different structures (including boron doping, germanium concentrations, and SiGe layer thickness) have been conducted. The...

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Main Authors: Bo Jiang, Dandan Gu, Yulong Zhang, Yan Su, Yong He, Tao Dong
Formáid: Artigo
Teanga:Inglês
Foilsithe: Hindawi Limited 2016-01-01
Sraith:Journal of Sensors
Rochtain Ar Líne:http://dx.doi.org/10.1155/2016/6584650
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