Interfacial reactions of Ti/ and Zr/Si1-xGex/Si contacts with rapid thermal annealing

The interfacial reactions of Ti/ and Zr/Si0.5Ge0.5/Si systems by rapid thermal annealing (RTA) have been investigated at temperatures from 580 to 900°C. In Ti/Si0.5Ge0.5 systems, C49-TiSi2 is transformed to C54-Ti(Si1-y Gey)2 by RTA for 30 sec at about 750°C, whose transformation temperature is lowe...

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Bibliografiske detaljer
Udgivet i:Superficies y vacío
Main Authors: Yukio Yasuda, Osamu Nakatsuka, Shigeaki Zaima
Format: Artigo
Sprog:Inglês
Udgivet: Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. 1999
Fag:
Física, Astronomía y Matemáticas
Ti
Zr
SiGe system
Electrical property
Online adgang:https://www.redalyc.org/articulo.oa?id=94200901
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