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Interfacial reactions of Ti/ and Zr/Si1-xGex/Si contacts with rapid thermal annealing
The interfacial reactions of Ti/ and Zr/Si0.5Ge0.5/Si systems by rapid thermal annealing (RTA) have been investigated at temperatures from 580 to 900°C. In Ti/Si0.5Ge0.5 systems, C49-TiSi2 is transformed to C54-Ti(Si1-y Gey)2 by RTA for 30 sec at about 750°C, whose transformation temperature is lowe...
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| Publicat a: | Superficies y vacío |
|---|---|
| Autors principals: | , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
1999
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| Matèries: | |
| Accés en línia: | https://www.redalyc.org/articulo.oa?id=94200901 |
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