Thermal-Electrical finite element analysis of nanometric copper vias under high fluence stress
This paper presents the development of a thermal-electrical finite element (FE) model with the objective to analyze failure mechanisms responsible of physical degradation (void, copper silicate formation, etc.) caused by high fluence stress of 90nm copper vias for FinfET devices. Indeed in [1], this...
Αποθηκεύτηκε σε:
| Εκδόθηκε σε: | Avances en Ciencias e Ingenierías |
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| Κύριοι συγγραφείς: | , , , |
| Μορφή: | Artigo |
| Γλώσσα: | Inglês |
| Έκδοση: |
Universidad San Francisco de Quito
2013
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| Θέματα: | |
| Διαθέσιμο Online: | https://www.redalyc.org/articulo.oa?id=726180836010 |
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