Thermal-Electrical finite element analysis of nanometric copper vias under high fluence stress
This paper presents the development of a thermal-electrical finite element (FE) model with the objective to analyze failure mechanisms responsible of physical degradation (void, copper silicate formation, etc.) caused by high fluence stress of 90nm copper vias for FinfET devices. Indeed in [1], this...
-д хадгалсан:
| -д хэвлэсэн: | Avances en Ciencias e Ingenierías |
|---|---|
| Үндсэн зохиолчид: | , , , |
| Формат: | Artigo |
| Хэл сонгох: | Inglês |
| Хэвлэсэн: |
Universidad San Francisco de Quito
2013
|
| Нөхцлүүд: | |
| Онлайн хандалт: | https://www.redalyc.org/articulo.oa?id=726180836010 |
| Шошгууд: |
Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!
|