Gaussian superlattice in GaAs/GaInNAs solar cells
We present a new type of photovoltaic device where Gaussian superlattice is inserted in the i-region of a GaAs/GaInNAs p-i-n solar cell. A theoretical model is developed to study the performance of these devices. We establish a new criterion to calculate miniband widths in superlattice heterostruct...
Guardado en:
| Publicado en: | Revista Mexicana de Física |
|---|---|
| Autores principales: | , , , , |
| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
Sociedad Mexicana de Física A.C.
2017
|
| Materias: | |
| Acceso en línea: | https://www.redalyc.org/articulo.oa?id=57050507004 |
| Etiquetas: |
Sin Etiquetas, Sea el primero en etiquetar este registro!
|