Gaussian superlattice in GaAs/GaInNAs solar cells
We present a new type of photovoltaic device where Gaussian superlattice is inserted in the i-region of a GaAs/GaInNAs p-i-n solar cell. A theoretical model is developed to study the performance of these devices. We establish a new criterion to calculate miniband widths in superlattice heterostruct...
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| izdano v: | Revista Mexicana de Física |
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| Principais autores: | , , , , |
| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
Sociedad Mexicana de Física A.C.
2017
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| Teme: | |
| Online dostop: | https://www.redalyc.org/articulo.oa?id=57050507004 |
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