Electronic structure of pn delta-doped quantum wells in GaAs
We present the electron and hole subband structure in a coupled p- and n-type delta-doped quantum well in GaAs. The study is performedin the framework of the envelope function approximation via analytical expressions for the Hartree potential previously obtained through thelines of the Thomas-Fermi...
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| Pubblicato in: | Revista Mexicana de Física |
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| Autori principali: | , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Sociedad Mexicana de Física A.C.
2007
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| Soggetti: | |
| Accesso online: | https://www.redalyc.org/articulo.oa?id=57036163024 |
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