Influence of state coupling on the electron transport in shallow quantum wells
Resistivity and magnetotransport of shallow GaAs/InGaAs/GaAs quantum wells with and without a thin central AlAs barrier or a In0:7Ga0:3Asdeep well have been investigated in the temperature interval 4–300 K and magnetic fields up to 12 T. Transport parameters are strongly af-fected by the insertion o...
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| Veröffentlicht in: | Revista Mexicana de Física |
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| Hauptverfasser: | , , , , , |
| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
Sociedad Mexicana de Física A.C.
2007
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| Schlagworte: | |
| Online-Zugang: | https://www.redalyc.org/articulo.oa?id=57036163012 |
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