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Influence of state coupling on the electron transport in shallow quantum wells

Resistivity and magnetotransport of shallow GaAs/InGaAs/GaAs quantum wells with and without a thin central AlAs barrier or a In0:7Ga0:3Asdeep well have been investigated in the temperature interval 4–300 K and magnetic fields up to 12 T. Transport parameters are strongly af-fected by the insertion o...

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Bibliographic Details
Published in:Revista Mexicana de Física
Main Authors: V.A. Kulbachinskii, I.S. Vasil’evskii, R.A. Lunin, G.B. Galiev, E.N. Eniushkina, V.G. Mokerov
Format: Artigo
Language:Inglês
Published: Sociedad Mexicana de Física A.C. 2007
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Online Access:https://www.redalyc.org/articulo.oa?id=57036163012
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