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Refractive index changes in n-type delta-doped GaAs under hydrostatic pressure

The effect of hydrostatic pressure on the refractive index changes (RIC) is studied in ± -doped quantum well (DDQW) in GaAs. Based on the effective mass approximation we implement an algebraic formalism to calculate the electronic structure and RIC. Our results obtained with this model show that the...

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Publicado en:Revista Mexicana de Física
Autores principales: O. Oubram, I. Rodríguez-Vargas, J. C. Martínez-Orozco
Formato: Artigo
Lenguaje:Inglês
Publicado: Sociedad Mexicana de Física A.C. 2014
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Acceso en línea:https://www.redalyc.org/articulo.oa?id=57031047012
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