Refractive index changes in n-type delta-doped GaAs under hydrostatic pressure
The effect of hydrostatic pressure on the refractive index changes (RIC) is studied in ± -doped quantum well (DDQW) in GaAs. Based on the effective mass approximation we implement an algebraic formalism to calculate the electronic structure and RIC. Our results obtained with this model show that the...
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| Vydáno v: | Revista Mexicana de Física |
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| Hlavní autoři: | , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Sociedad Mexicana de Física A.C.
2014
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| Témata: | |
| On-line přístup: | https://www.redalyc.org/articulo.oa?id=57031047012 |
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