Modelling the C-V characteristics of MOS capacitor on high resistivity silicon substrate for PIN photodetector applications
This work proposes an electrical model to simulate the C–V measurements of the MOS capacitor on high resistivity silicon. High resistivity silicon is used as a substrate for PIN photo detectors. C–V MOS capacitor characteristics on high resistivity silicon substrates differ considerably from the C–V...
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| Publicat a: | Revista Mexicana de Física |
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| Autors principals: | , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Sociedad Mexicana de Física A.C.
2006
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| Matèries: | |
| Accés en línia: | https://www.redalyc.org/articulo.oa?id=57028295014 |
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