Chemical sensitivity of Mo gate MOS capacitors

Mo gate MOS capacitors exhibit a negative shift of their C–V characteristic by up to 240 mV, at 125°C, in response to 1000 ppm hydrogen, in controlled nitrogen atmospheres. The experimental methods for obtaining capacitance and conductance, as a function of polarisation voltage, as well as the relev...

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Bibliografiska uppgifter
I publikationen:Revista Mexicana de Física
Huvudupphovsmän: R.M. Lombardi, R. Aragón, CINSO– CONICET–CITEFA
Materialtyp: Artigo
Språk:Inglês
Publicerad: Sociedad Mexicana de Física A.C. 2006
Ämnen:
Física, Astronomía y Matemáticas
Mo gate
MOS device
hydrogen sensitivity
Länkar:https://www.redalyc.org/articulo.oa?id=57028295003
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