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Chemical sensitivity of Mo gate MOS capacitors
Mo gate MOS capacitors exhibit a negative shift of their C–V characteristic by up to 240 mV, at 125°C, in response to 1000 ppm hydrogen, in controlled nitrogen atmospheres. The experimental methods for obtaining capacitance and conductance, as a function of polarisation voltage, as well as the relev...
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| Veröffentlicht in: | Revista Mexicana de Física |
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| Hauptverfasser: | , , |
| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
Sociedad Mexicana de Física A.C.
2006
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| Schlagworte: | |
| Online Zugang: | https://www.redalyc.org/articulo.oa?id=57028295003 |
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