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Analysis of electron direct tunneling current through very-thin gate oxides in MOS capacitors with the parallel-perpendicular kinetic energy components and anisotropic masses
An electron direct tunneling current model of n+- poly - Si/SiO2/p - Si(100) metal-oxide-semiconductor (MOS) capacitors has been developed by considering a parallel-perpendicular kinetic energy coupling, which is represented by the gate electron phase velocity, and anisotropic masses under a parabol...
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| Publié dans: | Brazilian Journal of Physics |
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| Auteurs principaux: | , , , |
| Format: | Artigo |
| Langue: | Inglês |
| Publié: |
Sociedade Brasileira de Física
2010
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| Sujets: | |
| Accès en ligne: | https://www.redalyc.org/articulo.oa?id=46415799008 |
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