Microwave noise sources contributions to SiGe:C/Si and InP/InGaAs HBT’s performances
The present work describes the quantification of the noise sources contributions to the microwave transistor noise performance, particularly focusing on the minimum noise factor (Fmin) and on the equivalent noise resistance (Rn). For this analysis microwave noise small-signal modeling is used. This...
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| Publié dans: | Revista Mexicana de Física |
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| Auteurs principaux: | , , , , , |
| Format: | Artigo |
| Langue: | Inglês |
| Publié: |
Sociedad Mexicana de Física A.C.
2013
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| Sujets: | |
| Accès en ligne: | https://www.redalyc.org/articulo.oa?id=57025666010 |
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