Design and Analysis of an Ultra-Wideband High-Precision Active Phase Shifter in 0.18 μm SiGe BiCMOS Technology
This paper presents an active phase shifter for phased array system applications, implemented using 0.18 μm SiGe BiCMOS technology. The phase shifter circuit consists of a wideband quadrature signal generator, a vector modulator, an input balun, and an output balun. To enhance the bandwidth, a polyp...
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| Hlavní autoři: | , , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
MDPI AG
2025-05-01
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| Edice: | Journal of Low Power Electronics and Applications |
| Témata: | |
| On-line přístup: | https://www.mdpi.com/2079-9268/15/2/30 |
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