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Design and Analysis of an Ultra-Wideband High-Precision Active Phase Shifter in 0.18 μm SiGe BiCMOS Technology

This paper presents an active phase shifter for phased array system applications, implemented using 0.18 μm SiGe BiCMOS technology. The phase shifter circuit consists of a wideband quadrature signal generator, a vector modulator, an input balun, and an output balun. To enhance the bandwidth, a polyp...

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Principais autores: Hao Jiang, Zenglong Zhao, Nengxu Zhu, Fanyi Meng
Formato: Artigo
Idioma:Inglês
Publicado: MDPI AG 2025-05-01
Series:Journal of Low Power Electronics and Applications
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Acceso en liña:https://www.mdpi.com/2079-9268/15/2/30
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