Electrical properties of resistive switches based on Ba1-xSr xTiO3 thin films prepared by RF co-sputtering
In this work, we propose the use of Ba1-xSr xTiO3(0 ≤ x ≤ 1) thin films for the construction of MIM (metal-insulator-metal) heterostructures; and their great potential for the development of non-volatile resistance memories (ReRAM) is shown. The deposition of Ba1-xSr xTiO3 thin films was...
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| Pubblicato in: | Revista Mexicana de Física |
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| Autori principali: | , , , , , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Sociedad Mexicana de Física A.C.
2010
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| Soggetti: | |
| Accesso online: | https://www.redalyc.org/articulo.oa?id=57019827006 |
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