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Transistor characteristics of zinc oxide active layers at various zinc acetate dihydrate solution concentrations of zinc oxide thin-film
This paper presents a technique involving a sol-gel deposition method applied to the deposition of zinc oxide thin film for a transistor as a semiconductor layer. This method was used for manufacturing the essential thin films of II-VI semiconductors. Zinc oxide (ZnO) bottom-gate (BG) thin-film tran...
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| Publicado en: | Journal of Applied Research and Technology |
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| Autor Principal: | |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
Universidad Nacional Autónoma de México
2015
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| Assuntos: | |
| Acceso en liña: | https://www.redalyc.org/articulo.oa?id=47439895015 |
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