Cargando...
Surface Morphology Analysis of GaInAsSb Films Grown by Liquid Phase Epitaxy
We studied growth mechanisms in semiconducting Ga1¡xInxAsySb1¡y films grown by liquid phase epitaxyon (100) GaSb:Te (1017 cm¡3) substrates at 600 ° C solution-substrate temperature. Atomic Force Microscopy(AFM) images of these films show step-like corrugations, undulations, grooves, and terraces. Th...
Guardado en:
| Publicado en: | Brazilian Journal of Physics |
|---|---|
| Autores principales: | , , , |
| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
Sociedade Brasileira de Física
2006
|
| Materias: | |
| Acceso en línea: | https://www.redalyc.org/articulo.oa?id=46436572 |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|