MBE Growth and Characterization of Sn1-xEuxTe
Epilayers of Sn1¡xEuxTe (0 < x < 0:03) were grown by molecular beam epitaxy on freshly cleavedBaF2(111) substrates and their structural, electrical and optical properties were investigated. The thicknessesof epilayers were about 1.5 ¹m and deposition was carried out at growth temperatures of 300 oC....
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| Vydáno v: | Brazilian Journal of Physics |
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| Hlavní autoři: | , , , , , , , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Sociedade Brasileira de Física
2004
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| Témata: | |
| On-line přístup: | https://www.redalyc.org/articulo.oa?id=46434438 |
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